| Номер произв | 8N60 | ||||
| Описание | N-CHANNEL POWER MOSFET | ||||
| Производители | Unisonic Technologies | ||||
| логотип | |||||
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8N60 POWER MOSFET The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters FEATURES * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Halogen Free 8N60G-TA3-T 8N60G-TF1-T 8N60G-TF2-T 8N60G-TF3-T 8N60G-T2Q-T Package TO-220F1 TO-220F Pin Assignment GDS GDS GDS Tube Tube Tube Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-115.G
MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 9
Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) SYMBOL UNIT Gate-Source Voltage VGSS ±30 V Drain Current Pulsed (Note 2) Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) ID EAS dv/dt 8A 230 mJ 4.5 V/ns 147 W TO-220F/TO-220F1 48 W 50 W TJ °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C PARAMETER TO-220/TO-262 TO-220F/TO-220F1 SYMBOL θJC 62.5 2.6 UNIT °C/W °C/W www.unisonic.com.tw QW-R502-115.G | |||||
| Всего страниц | 9 Pages | ||||
| Скачать PDF | [ 8N60.PDF Даташит ] | ||||
8N60A
Type Designator: FQPF8N60C
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET, 8N60 datasheet, 8N60 circuit, 8N60 data sheet: UTC, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 48 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28 nC
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO220F
FQPF8N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQPF8N60C Datasheet (PDF)
0.1. fqpf8n60cf.pdf Size:750K _fairchild_semi Vpn tracker for mac.
February 2006TMFRFETFQPF8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored t
0.2. fqpf8n60ct fqpf8n60cydtu.pdf Size:925K _fairchild_semi
QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
0.3. fqp8n60c fqpf8n60c.pdf Size:927K _fairchild_semi
QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
Datasheet: FDH45N50F, FQPF7N60, FDN5632N_F085, FQPF7N65C, FQPF7N80C, FDD16AN08_F085, FQPF7P20, FQPF85N06, J113, FDD24AN06L_F085, FQPF8N60CF, FDMS7680, FQPF8N80C, FQD5N15, FQPF8N90C, FQPF9N25C, FQPF9N50CF.
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8N60D
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8n60 Mosfet Equivalent
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02 Dlna support for mac.
Transistor Mosfet 8n60