The 3rd generation planar MOSFET technology includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with an increased CGS/CGD ratio for better hard-switching performance. For both planar and Trench MOSFETs, on-resistance is important because it determines the power loss and heating of the power semiconductor. The lower the on-resistance the lower the device power loss and the cooler it will operate. This is particularly important in applications where the nominal operating temperatures usually exceed 125°C. Conventional planar MOSFETs. Plan‐View SEM Image XTEM along A‐A’ Measured I‐V Characteristics 18 B. Ho et al., International Semiconductor Device Research Conference 2012 (Currents are normalized to layout width) (Corrugated Substrate Process #1). A family of planar MOSFETs with voltage ratings from 900 V to 15 kV are demonstrated. This family of planar MOSFETs represents Cree’s next generation MOSFET design and process, in which we continue to refine and evolve device design and processing to further shrink die sizes and enhance device performance. At voltage ratings of 3.3 kV and above, the specific on-resistance of the MOSFETs is.
Abstract:
A family of planar MOSFETs with voltage ratings from 900 V to 15 kV are demonstrated. This family of planar MOSFETs represents Cree’s next generation MOSFET design and process, in which we continue to refine and evolve device design and processing to further shrink die sizes and enhance device performance. At voltage ratings of 3.3 kV and above, the specific on-resistance of the MOSFETs is approaching the theoretical limit. MOSFET switching performance in a clamped inductive switching circuit for the full range of voltage ratings is also demonstrated. Finally, improved threshold voltage and body diode stability under long-term stresses are presented.
Mosfet Vs Finfet
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